FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 132

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Rectifiers – Ultrafast Recovery Rectifiers
DO-15
EGP20A
EGP20B
EGP20C
EGP20D
EGP20F
EGP20G
EGP20J
EGP20K
DO-201AD
EGP30A
EGP30B
EGP30C
EGP30D
EGP30F
EGP30G
EGP30J
EGP30K
DO-41
EGP10A
UF4001
EGP10B
UF4002
EGP10C
EGP10D
UF4003
EGP10F
UF4004
EGP10G
EGP10J
UF4005
EGP10K
UF4006
UF4007
Products
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
RRM
1000
100
150
200
300
400
600
800
100
150
200
300
400
600
800
100
100
150
200
200
300
400
400
600
600
800
800
50
50
50
50
(V)
I
F (AV)
2
2
2
2
2
2
2
2
3
3
3
3
3
3
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(A)
I
FSM
125
125
125
125
125
125
125
125
75
75
75
75
75
75
75
75
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
(A)
2-127
V
F
Max (V)
0.95
0.95
0.95
0.95
1.25
1.25
0.95
0.95
0.95
0.95
1.25
1.25
1.25
1.25
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1
1
1
1
1
1
1
1
Discrete Power Products –
t
rr
Max (ns)
50
50
50
50
50
50
75
75
50
50
50
50
50
50
75
75
50
50
50
50
50
50
50
50
50
50
75
75
75
75
75
I
RM
or I
(µA)
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
R
Max
Diodes and Rectifiers
t
a
Typ (ns)
@125°C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
t
b
Typ (ns)
@125°C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–