FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 179

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TRIACs
TO-92
FKN2L60
TO-220F
FKPF10N80
FKPF12N80
FKPF2N80
FKPF3N80
FKPF5N80
FKPF8N80
Products
V
600
800
800
800
800
800
800
(V)
DRM
I
T(RMS)
(A)
1.5
10
12
2
3
5
8
I
100
120
(A)
TSM
30
50
80
9
9
(A/µs)
di/dt
50
50
50
50
50
50
50
2-174
V
TM
1.6
1.5
1.5
1.6
1.5
1.5
1.5
(V)
V
TM
@ I
I
TM
TM
4.5
7.5
15
17
12
Bold = New Products (introduced January 2003 or later)
3
3
(A)
V
(V)
Discrete Power Products –
1.5
1.5
1.5
1.5
1.5
1.5
1.5
GT
(V/µs)
dv/dt
500
300
300
500
300
300
300
(dv/dt)c
(V)
10
10
10
10
10
5
5
TRIACs
(mA)
I
30
30
10
20
20
30
GT
5