FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 69

MOSFET N-CH 250V 3.6A I2PAK

FQI4N25TU

Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQI4N25TU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
 Details
www.fairchildsemi.com
TO-220F (Continued)
FQPF15P12
FQPF22P10
FQPF17P10
SFS9540
FQPF12P10
FQPF8P10
SFS9520
FQPF5P10
SFS9510
FQPF47P06
FQPF27P06
FQPF17P06
SFS9Z34
FQPF11P06
SFS9Z24
SFS2955
FQPF7P06
SFS9Z14
Products
Min. (V)
BV
-120
-100
-100
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.125
0.026
0.175
10V
0.19
0.29
0.53
1.05
0.07
0.12
0.14
0.28
0.41
0.2
0.2
0.6
1.2
0.3
0.5
R
DS(ON)
4.5V
Max (Ω) @ V
2-64
2.5V
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
29
40
30
43
21
12
16
84
33
21
30
13
15
15
9
9
=5V
I
D
13.2
10.5
10.7
8.2
5.3
4.6
2.9
2.5
8.6
7.5
7.3
5.3
5.3
15
30
17
12
12
(A)
MOSFETs
P
D
41
41
53
38
28
29
16
62
47
39
36
30
29
29
24
24
45
23
(W)

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