FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 171
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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Zener Diodes (Continued)
1N4750A
BZX85C27
1N4751A
BZX85C30
1N4752A
BZX85C33
1N4753A
BZX85C36
1N4754A
BZX85C39
1N4755A
BZX85C43
1N4756A
BZX85C47
1N4757A
BZX85C51
1N4758A
BZX85C56
1N4760A
1N4764A
BZX85C100
SOD-123
MMSZ4684
MMSZ5226B
MMSZ5227B
MMSZ4686
MMSZ5228B
MMSZ5229B
MMSZ4688
MMSZ5230B
MMSZ4689
MMSZ5231B
MMSZ5232B
MMSZ5233B
MMSZ5234B
Products
V
Z
Voltage (V)
Nominal Zener
100
100
3.3
3.3
3.6
3.9
3.9
4.3
4.7
4.7
5.1
5.1
5.6
6.2
27
27
30
30
33
33
36
36
39
39
43
43
47
47
51
51
56
56
68
6
Dissipation (W)
P
D
Total Device
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2-166
Discrete Power Products –
Maximum Z
Bold = New Products (introduced January 2003 or later)
115
110
120
150
350
350
35
30
40
30
45
35
50
40
60
45
70
50
80
90
95
28
24
23
22
19
17
11
–
–
–
–
7
7
Z
(Ω)
Diodes and Rectifiers
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