FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 24

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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SO-8 (Continued)
FDS4435A
FDS4435
FDS6685
SI4835DY
NDS8435A
FDS6609A
FDS9435A
NDS9435A
NDS9430
FDS9400A
NDS9400A
FDS6875
FDS8934A
FDS9933
FDS9933A
NDS9933A
FDS4465
SI4463DY
FDS6575
FDS6576
FDS6375
FDS8433A
FDS9431A
Products
Min. (V)
BV
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
0.017
0.023
0.032
10V
0.02
0.02
0.02
0.05
0.05
0.06
0.13
–
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
2-19
0.0085
0.025
0.035
0.035
0.055
0.075
0.013
0.024
4.5V
0.035
0.035
0.055
0.012
0.014
0.047
0.05
0.08
0.08
0.03
0.14
0.13
0.1
0.2
Max (Ω) @ V
0.0105
0.0175
0.072
0.105
0.017
0.032
2.5V
GS
0.04
0.09
0.02
0.07
0.18
0.2
Replaced by FDS9400A
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
=
Discrete Power Products –
0.014
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
GS
2.4
21
17
19
19
48
18
10
10
10
23
20
10
86
41
50
43
23
20
8
6
6
= 5V
I
D
13.5
11.5
8.8
8.8
8.8
7.9
5.3
5.3
5.3
3.4
3.8
2.8
3.5
10
11
9
6
6
4
5
8
5
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2
2
2
2
2
(W)