mt47h128m16hg-3-it Micron Semiconductor Products, mt47h128m16hg-3-it Datasheet - Page 106
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mt47h128m16hg-3-it
Manufacturer Part Number
mt47h128m16hg-3-it
Description
2gb X4, X8, X16 Ddr2 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT47H128M16HG-3-IT.pdf
(127 pages)
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Output Electrical Characteristics and Operating Conditions
Table 38:
Figure 84:
PDF: 09005aef824f87b6/Source: 09005aef824f1182
2gb_ddr2.fm - Rev. A 9/06 EN
Parameter
AC differential cross-point voltage
AC differential voltage swing
Differential AC Output Parameters
Differential Output Signal Levels
Notes:
1. The typical value of V
V
V
TR
CP
and V
differential output signals must cross.
OX
(
Output Electrical Characteristics and Operating Conditions
AC
Symbol
V
Vswing
OX
) is expected to track variations in V
(
AC
)
V
V
DD
SS
OX
V
Q
SWING
Q
(
0.50 x V
AC
) is expected to be about 0.5 x V
106
Min
1.0
DD
Q - 125
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Crossing Point
V
OX
DD
0.50 x V
2Gb: x4, x8, x16 DDR2 SDRAM
Q. V
OX
Max
DD
(
AC
Q + 125
DD
) indicates the voltage at which
Q of the transmitting device
©2006 Micron Technology, Inc. All rights reserved.
Units
mV
mV
Notes
1
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