mt47h128m16hg-3-it Micron Semiconductor Products, mt47h128m16hg-3-it Datasheet - Page 33

• Manufacturer Part Number: mt47h128m16hg-3-it
• Description: 2gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Table 7:
PDF: 09005aef824f87b6/Source: 09005aef824f1182
2gb_ddr2.fm - Rev. A 9/06 EN
Current State
Any
Idle
Row Activating,
Active, or
Precharging
Read (auto
precharge
disabled
Write (auto
precharge
disabled.)
Read (with auto-
precharge)
Write (with auto-
precharge)
Truth Table – Current State Bank n – Command to Bank m
Notes: 1–6; notes appear below and on next page
Notes:
CS#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after
2. This table describes alternate bank operation, except where noted (i.e., the current state is
3. Current state definitions:
RAS#
(if the previous state was self refresh).
for bank n and the commands shown are those allowed to be issued to bank m, assuming
that bank m is in such a state that the given command is allowable). Exceptions are covered
in the notes below.
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
Idle:
Row active: A row in the bank has been activated and
Read:
Write:
CAS#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
complete.
bursts/accesses and no register accesses are in progress.
A READ burst has been initiated with auto precharge disabled, and has not
yet terminated.
A WRITE burst has been initiated, with auto precharge disabled, and has
not yet terminated.
The bank has been precharged,
WE#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any command otherwise allowed to bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Command/Action
2Gb: x4, x8, x16 DDR2 SDRAM
t
RP has been met, and any READ burst is
t
Command Truth Tables
RCD has been met. No data
©2006 Micron Technology, Inc. All rights reserved.
t
XSNR has been met
Notes
7, 9, 3
7, 9
7, 8
7, 3
7, 3
7, 3
7
7
7
7