lrs1383 Sharp Microelectronics of the Americas, lrs1383 Datasheet - Page 62

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lrs1383

Manufacturer Part Number
lrs1383
Description
Stacked Chip 32m Flash And 8m Sram
Manufacturer
Sharp Microelectronics of the Americas
Datasheet

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Part Number
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Quantity
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Part Number:
lrs1383F
Manufacturer:
JAE
Quantity:
190
NOTES:
1. Refer to DC Characteristics. When V
2. X can be V
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, (page buffer) program or OTP program are reliably executed
5. Refer to Table 5 for valid D
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LH28F320BX/LH28F640BX series for more information about query code.
3.5 Read Identifier Codes/OTP
The manufacturer code, device code, block lock
configuration codes, read configuration register code,
partition configuration register code and the data within
the OTP block can be read in the read identifier codes/
OTP mode (see Table 6 through Table 8). Using the
manufacturer and device codes, the system CPU can
automatically match the device with its proper
algorithms.
3.6 Read Query
CFI (Common Flash Interface) code, which is called
query code, can be read after writing the Read Query
command. The address to read query code should be in
the partition address which is written with the Read
Read Array
Output Disable
Standby
Reset
Read Identifier Codes/OTP
Read Query
Write
V
when V
PPH1/2
PP
voltages.
Mode
=V
IL
PPH1/2
or V
IH
and V
for control pins and addresses, and V
CC
Notes RST#
Appendix to Spec No.: MFM2-J13207
4,5,6
IN
6,7
6
3
6
is the specified voltage.
during a write operation.
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
PP
IL
Table 4. Bus Operation
V
PPLK
CE#
V
V
V
V
V
V
X
IH
IL
IL
IL
IL
IL
, memory contents can be read, but cannot be altered.
FUM00701
OE#
V
V
V
V
V
X
X
IH
IH
IL
IL
IL
PPLK
Model No.: LRS1383
(1, 2)
WE#
V
V
V
V
V
or V
Query command. The CFI data structure contains
information such as block size, density, command set and
electrical specifications (see Section 6). In this mode,
read cycles retrieve CFI information. To return to read
array mode, write the Read Array command (FFH) with
the partition address.
3.7 Write the Command to the CUI
Except for the Full Chip Erase command, writing
commands to the CUI always requires the word address,
block address or partition address. Before writing the
Block Erase command, Full Chip Erase command, (Page
Buffer) Program command or OTP Program command,
WSM (Write State Machine) should be ready and not be
used in any partition.
X
X
IH
IH
IH
IH
IL
PPH1/2
Section 6
Address
through
Table 6
Table 8
See
See
for V
X
X
X
X
X
March 1, 2001
PP
. See DC Characteristics for V
V
X
X
X
X
X
X
X
PP
Section 6
through
Table 6
Table 8
DQ
High Z
High Z
High Z
D
D
See
See
OUT
IN
0-15
Rev. 2.20
PPLK
16
and

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