MC68HC908LK24 MOTOROLA [Motorola, Inc], MC68HC908LK24 Datasheet - Page 72
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MC68HC908LK24
Manufacturer Part Number
MC68HC908LK24
Description
Microcontrollers
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MC68HC908LK24.pdf
(465 pages)
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FLASH Memory (FLASH)
4.5 FLASH Page Erase Operation
Data Sheet
72
NOTE:
Use the following procedure to erase a page of FLASH memory. A page
consists of 128 consecutive bytes starting from addresses $xx00 or
$xx80. The 48-byte user interrupt vectors area also forms a page. The
48-byte user interrupt vectors cannot be erased by the page erase
operation because of security reasons. Mass erase is required to erase
this page.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory; the code must be
executed from RAM. While these operations must be performed in the
order as shown, but other unrelated operations may occur between the
steps.
10. After time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the page address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Freescale Semiconductor, Inc.
For More Information On This Product,
register.
range desired.
again.
Go to: www.freescale.com
FLASH Memory (FLASH)
rcv
(1µs), the memory can be accessed in read mode
nvs
erase
nvh
(min. 10µs).
(5µs).
(1ms).
MC68HC908LJ24/LK24 — Rev. 2
MOTOROLA
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