HD64F3067RF20 Renesas Electronics America, HD64F3067RF20 Datasheet - Page 639

• Manufacturer Part Number: HD64F3067RF20
• Description: IC H8 MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3067RF20

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Package: 100PQFP
• Family Name: H8
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 16|32 Bit
• Number Of Programmable I/os: 70
• Interface Type: SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 7
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Bit 0—Program (P) *
PSU, EV, PV, or E bit at the same time.
Bit 0:
P
0
1
Notes: 1. Do not set two or more bits at the same time.
18.3.2
EBR is an 8-bit register that designates the flash memory block for erasure. EBR is initialized to
H'00 by a reset, in hardware standby mode, or software standby mode, when a high level is not
input to the FWE terminal, or when the FLMCR SWE bit is 0 when a high level is applied to the
FWE terminal. When a bit is set in EBR, the corresponding block can be erased. Other blocks are
erase - protected. The blocks are erased block by block. Therefore, set only one bit in EBR; do not
set bits in EBR to erase two or more blocks at the same time.
Each bit in EBR cannot be set until the SWE bit in FLMCR is set. The flash memory block
configuration is shown in table 18.4. To erase all the blocks, erase each block sequentially.
The H8/3067 Group does not support the on-board programming mode in mode 6, so bits in this
register cannot be set to 1 in mode 6.
Modes 1
to 4, and 6
Modes 5
and 7
2. Do not set/clear the SWE bit simultaneously with other bits (ESU, PSU, EV, PV, E, P).
3. Set the P and E bits according to the program and erase algorithms shown in section
Erase Block Register (EBR)
Do not turn off V
18.5, Programming and Erasing Flash Memory.
For the usage precautions, see section 18.9, Notes on Flash Memory
Programming/Erasing.
Description
Program mode cleared
Transition to program mode
[Setting condition]
When FWE = 1, SWE = 1, and PSU = 1
Bit
Initial value
R/W
Initial value
R/W
1
*
3
: Selects program mode transition or clearing. Do not set the SWE, ESU,
R/W
EB7
CC
R
0
0
7
when a bit is set.
R/W
EB6
R
6
0
0
EB5
R/W
R
5
0
0
EB4
R/W
4
R
0
0
Rev. 4.00 Jan 26, 2006 page 615 of 938
EB3
R/W
3
R
0
0
EB2
R/W
2
R
0
0
REJ09B0276-0400
Section 18 ROM
EB1
R/W
(Initial value)
1
R
0
0
R/W
EB0
R
0
0
0