PIC18F27J13-I/SP Microchip Technology, PIC18F27J13-I/SP Datasheet - Page 100

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PIC18F27J13-I/SP

Manufacturer Part Number
PIC18F27J13-I/SP
Description
IC PIC MCU 128KB FLASH 28SPDIP
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr

Specifications of PIC18F27J13-I/SP

Core Size
8-Bit
Program Memory Size
128KB (64K x 16)
Core Processor
PIC
Speed
48MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
22
Program Memory Type
FLASH
Ram Size
3.8K x 8
Voltage - Supply (vcc/vdd)
2.15 V ~ 3.6 V
Data Converters
A/D 10x10b/12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Controller Family/series
PIC18
Cpu Speed
48MHz
Digital Ic Case Style
DIP
Supply Voltage Range
1.8V To 5.5V
Embedded Interface Type
I2C, SPI, USART
Rohs Compliant
Yes
Core
PIC
Processor Series
PIC18F
Data Bus Width
8 bit
Maximum Clock Frequency
48 MHz
Data Ram Size
3.76 KB
On-chip Adc
Yes
Number Of Programmable I/os
2
Number Of Timers
8
Operating Supply Voltage
2.15 V to 3.6 V
Operating Temperature Range
- 40 C to + 85 C
A/d Bit Size
12 bit
A/d Channels Available
10
Height
3.43 mm
Interface Type
I2C, SPI, USART
Length
34.4 mm
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.15 V
Width
7.24 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
MA180030 - BOARD DEMO PIC18F47J13 FS USBMA180029 - BOARD DEMO PIC18F47J53 FS USB
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
PIC18(L)F2X/4XK22
6.4
The minimum erase block is 32 words or 64 bytes. Only
through the use of an external programmer, or through
ICSP™ control, can larger blocks of program memory
be bulk erased. Word erase in the Flash array is not
supported.
When
microcontroller itself, a block of 64 bytes of program
memory is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased. The
TBLPTR<5:0> bits are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash
program memory. The WREN bit must be set to enable
write operations. The FREE bit is set to select an erase
operation.
The write initiate sequence for EECON2, shown as
steps 4 through 6 in
Memory Erase
accidental writes. This is sometimes referred to as a
long write.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted during the long write
cycle. The long write is terminated by the internal
programming timer.
EXAMPLE 6-2:
DS41412D-page 100
Required
Sequence
initiating
Erasing Flash Program Memory
ERASE_BLOCK
Sequence”, is used to guard against
an
Section 6.4.1 “Flash Program
ERASING A FLASH PROGRAM MEMORY BLOCK
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BCF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
erase
sequence
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
from
Preliminary
the
6.4.1
The sequence of events for erasing a block of internal
program memory is:
1.
2.
3.
4.
5.
6.
7.
8.
; load TBLPTR with the base
; address of the memory block
; point to Flash program memory
; access Flash program memory
; enable write to memory
; enable block Erase operation
; disable interrupts
; write 55h
; write 0AAh
; start erase (CPU stall)
; re-enable interrupts
Load Table Pointer register with address of
block being erased.
Set the EECON1 register for the erase operation:
• set EEPGD bit to point to program memory;
• clear the CFGS bit to access program memory;
• set WREN bit to enable writes;
• set FREE bit to enable the erase.
Disable interrupts.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit. This will begin the block erase
cycle.
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
Re-enable interrupts.
FLASH PROGRAM MEMORY
ERASE SEQUENCE
 2010 Microchip Technology Inc.

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