MC9S12C64CFUE Freescale Semiconductor, MC9S12C64CFUE Datasheet - Page 654

IC MCU 64K FLASH 4K RAM 80-QFP

MC9S12C64CFUE

Manufacturer Part Number
MC9S12C64CFUE
Description
IC MCU 64K FLASH 4K RAM 80-QFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheets

Specifications of MC9S12C64CFUE

Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
CAN, EBI/EMI, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
60
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.35 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-QFP
Processor Series
S12C
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
4 KB
Interface Type
CAN/SCI/SPI
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
60
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
M68EVB912C32EE
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
Package
80PQFP
Family Name
HCS12
Maximum Speed
25 MHz
Operating Supply Voltage
2.5|5 V
Height
2.4 mm
Length
14 mm
Supply Voltage (max)
2.75 V, 5.5 V
Supply Voltage (min)
2.35 V, 2.97 V
Width
14 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Appendix A Electrical Characteristics
A.1.9
This section describes the characteristics of all I/O pins. All parameters are not always applicable, e.g. not
all pins feature pull up/down resistances.
1. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
2. Refer to
3. Parameter only applies in STOP or Pseudo STOP mode.
654
Conditions are 4.5< V
Num C
10
11
12
13
14
15
16
8 C to 12 C in the temper ature range from 50 C to 125 C .
1
2
3
4
5
6
7
8
9
P Input High Voltage
P Input Low Voltage
C Input Hysteresis
P
C
P
C
P
P
C
P
C
D Input Capacitance
P Port P, J Interrupt Input Pulse filtered
P Port P, J Interrupt Input Pulse passed
T Input High Voltage
T Input Low Voltage
T
Section A.1.4, “Current
Input Leakage Current (pins in high ohmic input mode)
Output High Voltage (pins in output mode)
Output High Voltage (pins in output mode)
Output Low Voltage (pins in output mode)
Output Low Voltage (pins in output mode)
Internal Pull Up Device Current,
tested at V
Internal Pull Up Device Current,
tested at V
Internal Pull Down Device Current,
tested at V
Internal Pull Down Device Current,
tested at V
Injection current
V
Partial Drive I OH = –2mA
Full Drive I
Partial Drive I
Full Drive I OL = +10mA
Single Pin limit
Total Device Limit. Sum of all injected currents
I/O Characteristics
in
= V
DD5
IL
IH
IH
IL
DDX
OH
or V
Max.
Max.
Min.
Min.
<5.5V Temperature from –40˚C to +140˚C, unless otherwise noted
OL
= –10mA
(2)
SS5
= +2mA
Injection”, for more details
Rating
MC9S12C-Family / MC9S12GC-Family
Table A-6. 5V I/O Characteristics
(3)
3
Rev 01.24
(1)
Symbol
V
t
t
I
I
V
V
I
I
V
V
PIGN
PVAL
I
I
V
V
PUH
PDH
V
V
PUL
PDL
C
ICS
ICP
HYS
I
OH
OH
in
OL
OL
IH
IH
IL
IL
in
V
V
0.65*V
V
DD5
DD5
SS5
–2.5
Min
–10
–25
10
10
– 0.8
– 0.8
- 0.3
DD5
Typ
250
7
Freescale Semiconductor
V
0.35*V
DD5
–130
Max
130
0.8
0.8
2.5
25
3
1
+ 0.3
DD5
Unit
mV
µA
µA
µA
µA
µA
µs
µs
pf
V
V
V
V
V
V
V
V

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