MC9S12C64CFUE Freescale Semiconductor, MC9S12C64CFUE Datasheet - Page 670

• Manufacturer Part Number: MC9S12C64CFUE
• Description: IC MCU 64K FLASH 4K RAM 80-QFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12C64CFUE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 60
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 80-QFP
• Processor Series: S12C
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 4 KB
• Interface Type: CAN/SCI/SPI
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 60
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: M68EVB912C32EE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• Package: 80PQFP
• Family Name: HCS12
• Maximum Speed: 25 MHz
• Operating Supply Voltage: 2.5|5 V
• Height: 2.4 mm
• Length: 14 mm
• Supply Voltage (max): 2.75 V, 5.5 V
• Supply Voltage (min): 2.35 V, 2.97 V
• Width: 14 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Appendix A Electrical Characteristics
A.5.1.1
The programming time for single word programming is dependant on the bus frequency as a well as on the
frequency f¨
A.5.1.2
Generally the time to program a consecutive word can be calculated as:
For the C16, GC16, C32 and GC32 device flash arrays, where up to 32 words in a row can be programmed
consecutively by keeping the command pipeline filled, the time to program a whole row is:
For the C64, GC64, C96, C128 and GC128 device flash arrays, where up to 64 words in a row can be
programmed consecutively by keeping the command pipeline filled, the time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.5.1.3
Erasing either a 512 byte or 1024 byte Flash sector takes:
The setup times can be ignored for this operation.
A.5.1.4
Erasing a NVM block takes:
This is independent of sector size.
The setup times can be ignored for this operation.
670
NVMOP
Single Word Programming
Row Programming
Sector Erase
Mass Erase
and can be calculated according to the following formula.
t
t
swpgm
t
t
bwpgm
brpgm
brpgm
MC9S12C-Family / MC9S12GC-Family
t
mass
t
era
=
=
=
=
≈
≈
9
t
t
4
swpgm
swpgm
4000
20000
⋅
Rev 01.24
⋅
---------------------
f
NVMOP
---------------------
f
NVMOP
1
⋅
1
+
---------------------
f
+
⋅
NVMOP
---------------------
f
31 t
63 t
NVMOP
1
+
+
⋅
⋅
1
25
9
bwpgm
bwpgm
⋅
⋅
----------
f
----------
f
bus
bus
1
1
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