AT32UC3L064-D3HES ATMEL [ATMEL Corporation], AT32UC3L064-D3HES Datasheet - Page 45

• Manufacturer Part Number: AT32UC3L064-D3HES
• Manufacturer: ATMEL [ATMEL Corporation]

7.4.6
7.4.7
32099D–06/2010
Quick Page Read
Page Buffer Operations
Figure 7-2.
A dedicated command, Quick Page Read (QPR), is provided to read all words in an addressed
page. All bits in all words in this page are AND’ed together, returning a 1-bit result. This result is
placed in the Quick Page Read Result (QPRR) bit in Flash Status Register (FSR). The QPR
command is useful to check that a page is in an erased state. The QPR instruction is much
faster than performing the erased-page check using a regular software subroutine.
The flash memory has a write and erase granularity of one page; data is written and erased in
chunks of one page. When programming a page, the user must first write the new data into the
Page Buffer. The contents of the entire Page Buffer is copied into the desired page in flash
memory when the user issues the Write Page command, Refer to
In order to program data into flash page Y, write the desired data to locations Y0 to Y31 in the
regular flash memory map. Writing to an address A in the flash memory map will not update the
flash memory, but will instead update location A%32 in the page buffer. The PAGEN field in the
Flash Command (FCMD) register will at the same time be updated with the value A/32.
High Speed Mode
Frequency
Speed mode
Frequency limit
for 0 wait state
operation
1 wait state
0 wait state
AT32UC3L016/32/64
Section 7.5.1 on page
48.
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