S912XEP100J5MAGR Freescale Semiconductor, S912XEP100J5MAGR Datasheet - Page 868

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S912XEP100J5MAGR

Manufacturer Part Number
S912XEP100J5MAGR
Description
S912XEP Series 16 Bit 50 Mhz 1 MB Flash 64 KB Ram Microcontroller - LQFP-144
Manufacturer
Freescale Semiconductor
Datasheet

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Chapter 24 128 KByte Flash Module (S12XFTM128K2V1)
24.4.1.4
Table 24-31
Flash block and other resources within the Flash module.
24.4.1.5
Table 24-32
on the D-Flash block and EEE operation.
868
FCMD
FCMD
0x0C
0x0D
0x0A
0x0B
0x0E
0x01
0x02
0x03
0x04
0x06
0x07
0x08
0x09
0x01
0x02
0x08
Erase Verify Block
Erase Verify Block
Program P-Flash
summarizes the valid P-Flash commands along with the effects of the commands on the P-
summarizes the valid D-Flash and EEE commands along with the effects of the commands
Erase All Blocks
Set User Margin
Set Field Margin
Erase All Blocks
Unsecure Flash
Verify Backdoor
Erase Verify All
Erase Verify All
P-Flash Commands
Erase Verify P-
D-Flash and EEE Commands
Program Once
Erase P-Flash
Erase P-Flash
Flash Section
Access Key
Read Once
Command
Command
Blocks
Sector
Blocks
Block
Level
Level
Verify that all D-Flash (and P-Flash) blocks are erased.
Verify that the D-Flash block is erased.
Erase all D-Flash (and P-Flash) blocks.
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN
bits in the FPROT register and the EPDIS and EPOPEN bits in the EPROT register are
set prior to launching the command.
Verify that all P-Flash (and D-Flash) blocks are erased.
Verify that a P-Flash block is erased.
Verify that a given number of words starting at the address provided are erased.
Read a dedicated 64 byte field in the nonvolatile information register in P-Flash block 0
that was previously programmed using the Program Once command.
Program a phrase in a P-Flash block.
Program a dedicated 64 byte field in the nonvolatile information register in P-Flash block
0 that is allowed to be programmed only once.
Erase all P-Flash (and D-Flash) blocks.
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN
bits in the FPROT register and the EPDIS and EPOPEN bits in the EPROT register are
set prior to launching the command.
Erase a single P-Flash block.
An erase of the full P-Flash block is only possible when FPLDIS, FPHDIS and FPOPEN
bits in the FPROT register are set prior to launching the command.
Erase all bytes in a P-Flash sector.
Supports a method of releasing MCU security by erasing all P-Flash (and D-Flash) blocks
and verifying that all P-Flash (and D-Flash) blocks are erased.
Supports a method of releasing MCU security by verifying a set of security keys.
Specifies a user margin read level for all P-Flash blocks.
Specifies a field margin read level for all P-Flash blocks (special modes only).
MC9S12XE-Family Reference Manual , Rev. 1.23
Table 24-31. P-Flash Commands
Table 24-32. D-Flash Commands
Function on D-Flash Memory
Function on P-Flash Memory
Freescale Semiconductor

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