DV164136 Microchip Technology, DV164136 Datasheet - Page 116
DV164136
Manufacturer Part Number
DV164136
Description
DEVELOPMENT KIT FOR PIC18
Manufacturer
Microchip Technology
Series
PIC®r
Type
MCUr
Datasheets
1.DM183032.pdf
(38 pages)
2.DV164136.pdf
(448 pages)
3.DV164136.pdf
(6 pages)
4.DV164136.pdf
(446 pages)
5.DV164136.pdf
(4 pages)
6.DV164136.pdf
(18 pages)
Specifications of DV164136
Contents
Board, Cables, CDs, PICkit™ 3 Programmer, Power Supply
Processor To Be Evaluated
PIC18F8722, PIC18F87J11
Interface Type
RS-232, USB
Operating Supply Voltage
3.3 V, 5 V
Silicon Manufacturer
Microchip
Core Architecture
PIC
Core Sub-architecture
PIC18
Silicon Core Number
PIC18F
Silicon Family Name
PIC18F8xxx
Kit Contents
PIC18 Exp Brd PICkit 3 Cable CD PSU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
PIC18F8722, PIC18F87J11
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DV164136
Manufacturer:
MICROCHIP
Quantity:
12 000
- DM183032 PDF datasheet
- DV164136 PDF datasheet #2
- DV164136 PDF datasheet #3
- DV164136 PDF datasheet #4
- DV164136 PDF datasheet #5
- DV164136 PDF datasheet #6
- Current page: 116 of 446
- Download datasheet (7Mb)
PIC18F8722 FAMILY
8.6
Data EEPROM memory has its own code-protect bits in
Configuration
operations are disabled if code protection is enabled.
The microcontroller itself can both read and write to the
internal data EEPROM regardless of the state of the
code-protect Configuration bit. Refer to Section 25.0
“Special Features of the CPU” for additional
information.
8.7
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM are blocked
during
parameter 33).
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
EXAMPLE 8-3:
DS39646C-page 114
Loop
Operation During Code-Protect
Protection Against Spurious Write
the
CLRF
CLRF
BCF
BCF
BCF
BSF
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ EEADR, F
BRA
INCFSZ EEADRH, F
BRA
BCF
BSF
Power-up
Words.
EEADR
EEADRH
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
EECON1, RD
55h
EECON2
0AAh
EECON2
EECON1, WR
EECON1, WR
$-2
LOOP
LOOP
EECON1, WREN
INTCON, GIE
DATA EEPROM REFRESH ROUTINE
External
Timer
read
period
; Start at address 0
;
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write 0AAh
; Set WR bit to begin write
; Wait for write to complete
; Increment address
; Not zero, do it again
; Increment the high address
; Not zero, do it again
; Disable writes
; Enable interrupts
and
(T
PWRT
write
,
8.8
The data EEPROM is a high-endurance, byte address-
able array that has been optimized for the storage of
frequently
variables or other data that are updated often).
Frequently changing values will typically be updated
more often than specification D124. If this is not the
case, an array refresh must be performed. For this
reason, variables that change infrequently (such as
constants, IDs, calibration, etc.) should be stored in
Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 8-3.
Note:
Using the Data EEPROM
If data EEPROM is only used to store
constants and/or data that changes often,
an array refresh is likely not required. See
specification D124.
changing
© 2008 Microchip Technology Inc.
information
(e.g.,
program
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