MCF5253CVM140 Freescale Semiconductor, MCF5253CVM140 Datasheet - Page 120

• Manufacturer Part Number: MCF5253CVM140
• Description: IC MPU 32BIT 140MHZ 225-MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: MCF525xr

Specifications of MCF5253CVM140

• Core Processor: Coldfire V2
• Core Size: 32-Bit
• Speed: 140MHz
• Connectivity: CAN, EBI/EMI, I²C, QSPI, UART/USART, USB OTG
• Peripherals: DMA, WDT
• Program Memory Type: ROMless
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.08 V ~ 1.32 V
• Data Converters: A/D 6x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 225-MAPBGA
• Family Name: MCF5xxx
• Device Core: ColdFire V2
• Device Core Size: 32b
• Frequency (max): 140MHz
• Instruction Set Architecture: RISC
• Supply Voltage 1 (typ): 1.2/3.3V
• Operating Supply Voltage (max): 1.32/3.6V
• Operating Supply Voltage (min): 1.08/3V
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 225
• Package Type: MA-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of I /o: -
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / Rohs Status: Compliant

Synchronous DRAM Controller Module
7.5
Synchronous DRAMs have a prescribed initialization sequence. The DRAM controller supports this
sequence with the following procedure:
7.5.1
It is possible to configure the operation of SDRAMs, namely their burst operation and CAS latency,
through the SDRAM mode register. CAS latency is a function of the speed of the SDRAM and the bus
clock of the DRAM controller. The DRAM controller operates at a CAS latency of 1 or 2.
Although the MCF5253 DRAM controller supports bursting operations, it does not use the bursting
features of the SDRAMs. Because the MCF5253 can burst operand sizes of 1, 2, 4, or 16 bytes long, the
concept of a fixed burst length in the SDRAMs mode register becomes problematic. Therefore, the
MCF5253 DRAM controller generates the burst cycles rather than the SDRAM device. Because the
MCF5253 generates a new address and a
SDRAM mode register should be set either to a burst length of one or to not burst. This allows bursting to
be controlled by the MCF5253 instead.
The SDRAM mode register is written to by setting the associated block’s DACR[IMRS]. First, the base
address and mask registers must be set to the appropriate configuration to allow the mode register to be set.
7-16
1. SDRAM control signals are reset to idle state. Wait the prescribed period after reset before any
2. Initialize the DCR, DACR, and DMR in their operational configuration. Do not yet enable
3. Issue a
4. Enable refresh (set DACR[RE]) and wait for at least 8 refreshes to occur.
5. Before issuing the
6. Issue the
action is taken on the SDRAMs. This is normally around 100 µs.
REF
Wait the time (determined by t
the
Initialization Sequence
MRS
commands.
Mode Register Settings
PALL
Mode register settings are driven on the SDRAM address bus, so care must
be taken to change DMR[BAM] if the mode register configuration does not
fall in the address range determined by the address mask bits. After the
mode register is set, DMR mask bits can be restored to their desired
configuration.
Improperly set DMR mask bits may prevent access to the mode register
address. Thus, the user should determine the mapping of the mode register
address to the MCF5253 address bits to find out if an access is blocked. If
the DMR setting prohibits mode register access, the DMR should be
reconfigured to enable the access and then set to its necessary configuration
after the
to execute properly.
MRS
command to the SDRAMs by setting DCR[IP] and accessing a SDRAM location.
command by setting DACR[IMRS] and accessing a location in the SDRAM.
MRS
MRS
command executes.
command, determine if the DMR mask bits need to be modified to allow
MCF5253 Reference Manual, Rev. 1
RP
) before any other execution.
READ
or
NOTE
NOTE
WRITE
command for each transfer within the burst, the
Freescale Semiconductor
PALL
or