SI1011-A-GM Silicon Laboratories Inc, SI1011-A-GM Datasheet - Page 180

• Manufacturer Part Number: SI1011-A-GM
• Description: IC TXRX MCU + EZRADIOPRO
• Manufacturer: Silicon Laboratories Inc

Specifications of SI1011-A-GM

• Package / Case: 42-QFN
• Frequency: 240MHz ~ 960MHz
• Data Rate - Maximum: 256kbps
• Modulation Or Protocol: FSK, GFSK, OOK
• Applications: General Purpose
• Power - Output: 20dBm
• Sensitivity: -121dBm
• Voltage - Supply: 1.8 V ~ 3.6 V
• Current - Receiving: 18.5mA
• Current - Transmitting: 85mA
• Data Interface: PCB, Surface Mount
• Memory Size: 8kB Flash, 768B RAM
• Antenna Connector: PCB, Surface Mount
• Number Of Receivers: 1
• Number Of Transmitters: 1
• Wireless Frequency: 240 MHz to 960 MHz
• Interface Type: UART, SMBus, SPI, PCA
• Output Power: 20 dBm
• Operating Supply Voltage: 0.9 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Maximum Supply Current: 4 mA
• Minimum Operating Temperature: - 40 C
• Modulation: FSK, GFSK, OOK
• Protocol Supported: C2, SMBus
• Core: 8051
• Program Memory Type: Flash
• Program Memory Size: 8 KB
• Data Ram Size: 768 B
• Supply Current (max): 4 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1872-5

Si1010/1/2/3/4/5
16.10. Low Power Mode
Setting the LPEN bit in the DC0CF register will enable a Low Power Mode for the dc-dc converter. In Low
Power Mode, the bias currents are substantially reduced, which can lead to an efficiency improvement with
light load currents (generally less than a few mA). The drawback to this mode is that the response time of
the converter’s analog blocks is increased; larger delay in the circuits controlling the Diode Bypass switch
can lead to loss of efficiency at medium and high load currents due to reverse leakage in the switch. The
Low power mode also reduces the peak inductor current limit as shown in Table 16.1.
16.11. Passive Diode Mode
Setting the EXTDEN bit in DC0MD enables the Passive Diode Mode. In this mode, the control circuits for
the Diode Bypass switch are disabled, which reduces the converter’s quiescent operating current. An
external Schottky diode may be connected between the DCEN (anode) and VDD_MCU/DC+ (cathode)
pins. Under light load conditions, an external diode is typically not required. There are two situations in
which this mode can prove beneficial. First is with very light load currents, where the efficiency is domi-
nated by the converter’s quiescent current. The converter will use an internal p-n junction diode to transfer
current from the inductor to the output capacitor; although there is a larger voltage drop (and power loss)
across a passive diode, the overall efficiency may be improved due to the reduction in quiescent current.
The second situation is when output power is very high. In that case, efficiency can suffer because some
reverse current can flow in the Diode Bypass switch before the control circuitry turns the switch off. Putting
the device in Passive Diode Mode and optionally connecting an external Schottky diode between the
DCEN and VDD_MCU/DC+ pins (parallel to the internal diode) may provide higher efficiency in some
applications than using the internal Diode Bypass switch.
180
Rev. 1.0