mt48h8m16lf Micron Semiconductor Products, mt48h8m16lf Datasheet - Page 14

• Manufacturer Part Number: mt48h8m16lf
• Description: 128mb 8 Meg X 16, 4 Meg X 32 Mobile Sdram
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Absolute Maximum Ratings
Table 4:
Table 5:
PDF: 09005aef832ff1ea / Source: 09005aef832ff1ac
128mb_mobile_sdram_y35m__2.fm - Rev. B 6/08 EN
Voltage on V
Voltage on inputs, NC or I/O balls relative to V
Storage temperature plastic
Parameter/Condition
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage
Output low voltage
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQs are disabled; 0V ≤ V
Operating temperature:
Industrial
DD
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions
Notes: 1–2 apply to all parameters and conditions; V
Voltage/Temperature
/V
IN
DD
Notes:
Notes:
≤ V
Q supply relative to V
DD
(All other balls not under test = 0V)
1. V
1. All voltages referenced to V
2. A full initialization sequence is required before proper device operation is ensured.
3. V
4. I
Stresses greater than those listed in Table 4 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
be greater than one third of the cycle rate. V
width ≤ 3ns.
OUT
DD
IH
overshoot: V
and V
= 4mA for full drive strength. Other drive strengths require appropriate scale.
DD
SS
Q must be within 300mV of each other at all times. V
SS
IH
OUT
(MAX) = V
≤ V
V
Symbol
DD
DD
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
T
V
/V
STG
Q
SS
IN
14
DD
DD
.
Q + 2V for a pulse width ≤ 3ns, and the pulse width cannot
Q
DD
Symbol
/V
V
V
V
V
V
V
I
DD Q
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OZ
DD
DD
OH
I
OL
IH
A
IL
I
Q = 1.7–1.95V
–0.35
–0.35
Min
–55
IL
0.8 × V
0.9 × V
undershoot: V
Min
–0.3
–1.0
–1.5
–40
1.7
1.7
–
DD
DD
Q V
Q
Electrical Specifications
DD
Max
+150
IL
+2.8
+2.8
Max
1.95
1.95
+0.3
(MIN) = –2V for a pulse
+85
Q + 0.3
0.2
1.0
1.5
©2008 Micron Technology, Inc. All rights reserved.
–
DD
Q must not exceed V
Unit
µA
µA
°C
V
V
V
V
V
V
Preliminary
Unit
°C
V
Notes
3
3
4
4
DD
.