mt48h8m16lf Micron Semiconductor Products, mt48h8m16lf Datasheet - Page 5

• Manufacturer Part Number: mt48h8m16lf
• Description: 128mb 8 Meg X 16, 4 Meg X 32 Mobile Sdram
• Manufacturer: Micron Semiconductor Products

Figure 1:
General Description
PDF: 09005aef832ff1ea / Source: 09005aef832ff1ac
128mb_mobile_sdram_y35m__2.fm - Rev. B 6/08 EN
Micron Technology
Product family
48 = Mobile SDR SDRAM
Operating voltage
H = 1.8V/1.8V
Configuration
8 Meg x 16
4 Meg x 32
Addressing
LF = Mobile standard addressing
Part Numbering
The Micron
memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM
with a synchronous interface (all signals are registered on the positive edge of the clock
signal, CLK). Each of the x16’s 33,554,432-bit banks is organized as 4,096 rows by 512
columns by 16 bits. Each of the x32’s 33,554,432-bit banks is organized as 4,096 rows by
256 columns by 32 bits.
SDRAMs offer substantial advances in DRAM operating performance, including the
ability to synchronously burst data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks in order to hide precharge
time, and the capability to randomly change column addresses on each clock cycle
during a burst access.
MT
48
®
128Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access
H
8M16 LF
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
5
B4
-6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IT
:K
Design revision
:K
Operating temperature
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Cycle time
-75 = 7.5ns,
Package codes
B4 = 8mm x 8mm VFBGA “green”
B5 = 8mm x 13mm VFBGA “green”
-6 = 6ns,
t
CK CL = 3
General Description
©2008 Micron Technology, Inc. All rights reserved.
t
CK CL = 3
Preliminary