mt48h8m16lf Micron Semiconductor Products, mt48h8m16lf Datasheet - Page 28

• Manufacturer Part Number: mt48h8m16lf
• Description: 128mb 8 Meg X 16, 4 Meg X 32 Mobile Sdram
• Manufacturer: Micron Semiconductor Products

DEEP POWER-DOWN (DPD)
Operations
Truth Tables
Table 16:
PDF: 09005aef832ff1ea / Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr5.08__4.fm - Rev. B 6/08 EN
(auto precharge
(auto precharge
Current State
Row active
disabled)
disabled)
Write
Read
Any
Idle
Truth Table – Current State Bank n, Command to Bank n
Notes 1–6; notes appear below this table
Notes:
CS#
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
2. This table is bank-specific, except where noted; i.e., the current state is for a specific bank
3. Current state definitions:
The DEEP POWER-DOWN command causes the Mobile SDRAM to enter deep power-
down mode. DPD is an operating mode used to achieve maximum power reduction by
eliminating the power of the whole memory array of the devices. This mode is entered by
having all banks idle then holding CS# and WE# LOW with RAS# and CAS# held HIGH at
the rising edge of the clock, while CKE is LOW. This mode is exited by asserting CKE
HIGH.
1. This table applies when CKE
RAS# CAS#
after
and the commands shown can be issued to that bank when in that state. Exceptions are
covered in the notes below.
Idle:
Row active:
Read:
Write:
H
H
H
H
H
H
H
H
H
X
L
L
L
L
L
L
L
t
XSR has been met (if the previous state was self refresh).
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
WE#
X
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
The bank has been precharged, and
A row in the bank has been activated, and
bursts/accesses and no register accesses are in progress.
not yet terminated or been terminated.
A WRITE burst has been initiated, with auto precharge disabled, and has
not yet terminated or been terminated.
A READ burst has been initiated, with auto precharge disabled, and has
Command (Action)
COMMAND INHIBIT (NOP/Continue previous operation)
NO OPERATION (NOP/Continue previous operation)
ACTIVE (Select and activate row)
AUTO REFRESH
LOAD MODE REGISTER
PRECHARGE
READ (Select column and start READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE (Deactivate row in bank or banks)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE (Truncate READ burst, start PRECHARGE)
BURST TERMINATE
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE (Truncate WRITE burst, start PRECHARGE)
BURST TERMINATE
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
n-1
28
was HIGH and CKE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
n
is HIGH (see Table 18 on page 32) and
t
RP has been met.
t
RCD has been met. No data
©2008 Micron Technology, Inc. All rights reserved.
Operations
Preliminary
Notes
9, 10
9, 10
11
10
10
10
10
10
10
7
7
8
8
8