mt48h8m16lf Micron Semiconductor Products, mt48h8m16lf Datasheet - Page 62

• Manufacturer Part Number: mt48h8m16lf
• Description: 128mb 8 Meg X 16, 4 Meg X 32 Mobile Sdram
• Manufacturer: Micron Semiconductor Products

Figure 41:
Figure 42:
PDF: 09005aef832ff1ea / Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr5.08__4.fm - Rev. B 6/08 EN
WRITE With Auto Precharge Interrupted by a READ
WRITE With Auto Precharge Interrupted by a WRITE
Notes:
Notes:
Internal
States
Internal
States
1. DQM is LOW.
1. DQM is LOW.
Command
Command
Address
Address
Bank m
Bank m
Bank n
Bank n
CLK
CLK
DQ
DQ
Page active
Page active
T0
NOP
T0
NOP
WRITE - AP
WRITE - AP
Bank n,
Bank n,
BANK n
Page active
Page active
BANK n
Col a
T1
D
T1
Col a
D
a
a
IN
IN
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
WRITE with burst of 4
WRITE with burst of 4
62
a + 1
T2
T2
a + 1
D
NOP
NOP
D
IN
IN
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Bank m,
READ - AP
T3
T3
a + 2
BANK m
Col d
D
NOP
IN
Interrupt burst, write-back
t
WR - Bank n
READ with burst of 4
WRITE - AP
Bank m,
Col d
BANK m
T4
T4
NOP
CL = 3 (bank m)
D
t
d
Interrupt burst, write-back
WR - Bank n
IN
WRITE with burst of 4
T5
T5
d + 1
NOP
NOP
D
precharge
IN
t
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RP - Bank n
Timing Diagrams
T6
T6
D
NOP
d + 2
NOP
D
OUT
d
Precharge
IN
t RP - Bank n
Don’t Care
Don’t Care
Preliminary
T7
T7
d + 1
D
d + 3
NOP
NOP
D
t WR - Bank m
OUT
t RP - Bank m
IN
Write-back