mt48h8m16lf Micron Semiconductor Products, mt48h8m16lf Datasheet - Page 16

• Manufacturer Part Number: mt48h8m16lf
• Description: 128mb 8 Meg X 16, 4 Meg X 32 Mobile Sdram
• Manufacturer: Micron Semiconductor Products

Table 8:
Table 9:
PDF: 09005aef832ff1ea / Source: 09005aef832ff1ac
128mb_mobile_sdram_y35m__2.fm - Rev. B 6/08 EN
Parameter/Condition
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Operating current:
Burst mode; READ or WRITE;
All banks active, half DQs toggling every cycle
Auto refresh current
CKE = HIGH; CS# = HIGH
Deep power-down
Parameter/Condition
Self refresh
CKE = LOW;
Address and control inputs are stable; Data bus
inputs are stable.
t
CK =
I
Note 1 applies to all parameters; notes appear on page 16; V
I
Notes: 1, 5, 9, and 10 apply to all conditions and parameters; V
DD
DD
7 Specifications and Conditions (x16 and x32)
Specifications and Conditions (x32) (continued)
t
Notes:
CK (MIN);
10. Values for I
1. A full initialization sequence is required before proper device operation is ensured.
2. I
3. The I
4. Address transitions average one transition every two clocks.
5. Measurement is taken 500ms after entering into this operating mode to provide tester
6. Other input signals can transition only one time for every two clocks and are otherwise at
7. CKE is HIGH during REFRESH command period
8. Typical values at 25°C (not a maximum value).
9. Enables on-die refresh and address counters.
minimum cycle time and the outputs open.
frequency alteration for the test condition.
measuring unit settling time.
valid V
nominal value and does not result in a fail value.
range. All other I
DD
is dependent on output loading and cycle rates. Specified values are obtained with
DD
IH
current will increase or decrease proportionally according to the amount of
or V
DD
IL
7 85°C full array and partial array are guaranteed for the entire temperature
levels.
DD
Full array, 85°C
Full array, 45°C
Half array, 85°C
Half array, 45°C
1/4 array, 85°C
1/4 array, 45°C
1/8 array, 85°C
1/8 array, 45°C
1/16 array, 85°C
1/16 array, 45°C
t
t
RFC =
RFC = 7.8125µs
7 values are estimated.
t
RFC (MIN)
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
16
t
RCD met;
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
Symbol
I
DD
DD
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
I
ZZ
DD
/V
3N
t
4
5
6
7
7
7
7
7
7
7
7
7
7
RFC (MIN) else CKE is LOW. The I
/V
DD
DD
Q = 1.70–1.95V
Q = 1.70–1.95V
100
20
90
10
-6
5
Electrical Specifications
Max
I
200
140
160
120
140
100
120
100
DD
95
90
©2008 Micron Technology, Inc. All rights reserved.
-75
15
90
85
10
7
3
Unit
mA
mA
mA
mA
µA
DD
Preliminary
7 limit is a
Unit
2, 3, 4, 6
2, 3, 4, 7
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
Notes
3, 4, 6
2, 3, 4
5, 8