mt48h8m16lf Micron Semiconductor Products, mt48h8m16lf Datasheet - Page 52

• Manufacturer Part Number: mt48h8m16lf
• Description: 128mb 8 Meg X 16, 4 Meg X 32 Mobile Sdram
• Manufacturer: Micron Semiconductor Products

Figure 30:
PDF: 09005aef832ff1ea / Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr5.08__4.fm - Rev. B 6/08 EN
WRITE-to-PRECHARGE
Notes:
1. DQM could remain LOW in this example if the WRITE burst is a fixed length of two.
Fixed-length WRITE bursts can be truncated with the BURST TERMINATE command.
When truncating a WRITE burst, the input data applied coincident with the BURST
TERMINATE command is ignored. The last data written (provided that DQM is LOW at
that time) will be the input data applied one clock previous to the BURST TERMINATE
command. This is shown in Figure 31 on page 53, where data n is the last desired data
element of a longer burst.
t
t
WR@
WR@
Command
Command
Address
Address
DQM
DQM
t
t
CLK
CK
CK < 15ns
DQ
DQ
15ns
Bank a,
Bank a,
WRITE
WRITE
Col n
Col n
D
D
T0
n
n
IN
IN
n + 1
n + 1
NOP
NOP
T1
D
D
IN
IN
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
t
WR
52
PRECHARGE
(a or all)
Bank
NOP
T2
t
WR
PRECHARGE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(a or all)
Bank
T3
NOP
t RP
NOP
NOP
T4
t RP
Bank a,
ACTIVE
NOP
Row
T5
Don’t Care
©2008 Micron Technology, Inc. All rights reserved.
Bank a,
ACTIVE
Timing Diagrams
Row
NOP
T6
Preliminary