mt48h8m16lf Micron Semiconductor Products, mt48h8m16lf Datasheet - Page 27

• Manufacturer Part Number: mt48h8m16lf
• Description: 128mb 8 Meg X 16, 4 Meg X 32 Mobile Sdram
• Manufacturer: Micron Semiconductor Products

Figure 11:
BURST TERMINATE
AUTO REFRESH
SELF REFRESH
PDF: 09005aef832ff1ea / Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr5.08__4.fm - Rev. B 6/08 EN
PRECHARGE Command
The BURST TERMINATE command is used to either truncate fixed-length or
continuous page bursts. The most recently registered READ or WRITE command prior to
the BURST TERMINATE command is truncated.
AUTO REFRESH is used during normal operation of the SDRAM and is analogous to
CAS#-BEFORE-RAS# (CBR) REFRESH in conventional DRAMs. Addressing is generated
by the internal refresh controller. This makes the address bits “Don’t Care” during an
AUTO REFRESH command.
The SELF REFRESH command is used to place the device in self refresh mode. The self
refresh mode is used to retain data in the SDRAM while the rest of the system is powered
down. When in the self refresh mode, the SDRAM retains data without external clocking.
The SELF REFRESH command is initiated like an AUTO REFRESH command, except
CKE is disabled (LOW). After the SELF REFRESH command is registered, all the inputs to
the SDRAM become “Don’t Care” with the exception of CKE, which must remain LOW.
BA0, BA1
Address
RAS#
CAS#
WE#
CKE
A10
CLK
CS#
HIGH
Valid Address
Bank selected
All banks
address
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
Bank
27
Don’t Care
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
Commands
Preliminary