R5F21134DFP#U0 Renesas Electronics America, R5F21134DFP#U0 Datasheet - Page 176

• Manufacturer Part Number: R5F21134DFP#U0
• Description: IC R8C MCU FLASH 32LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/R8C/Tiny/13r

Specifications of R5F21134DFP#U0

• Core Size: 16-Bit
• Program Memory Size: 16KB (16K x 8)
• Oscillator Type: Internal
• Core Processor: R8C
• Speed: 20MHz
• Connectivity: SIO, UART/USART
• Peripherals: LED, POR, Voltage Detect, WDT
• Number Of I /o: 22
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• No. Of I/o's: 22
• Eeprom Memory Size: 4KB
• Ram Memory Size: 1024Byte
• Cpu Speed: 20MHz
• No. Of Timers: 16
• Digital Ic Case: RoHS Compliant
• Controller Family/series: R8C/13
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: R0K521134S000BE - KIT EVAL STARTER FOR R8C/13R0E521134EPB00 - KIT EMULATOR PROBE FOR PC7501R0E521134CPE00 - EMULATOR COMPACT R8C/13
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.20
REJ09B0111-0120
R8C/13 Group
17. Flash Memory Version
Table 17.1 Flash Memory Version Performance
Number of commands
R O M c o d e p r o t e c t i o n
Table 17.2 Flash Memory Rewrite Modes
Number of program
and erasure
17.1 Overview
F l a s h m e m o r y o p e r a t i n g m o d e
E r a s e b l o c k
Method for erasure
M e t h o d f o r p r o g r a m
Program, erase control method
Protect method
Flash memory
rewrite mode
Function
Areas which
can be rewritten
Operation
mode
ROM
programmer
NOTES:
The flash memory version has two modes—CPU rewrite and standard serial I/O—in which its flash
memory can be operated on.
Table 17.1 outlines the performance of flash memory version (see “Table 1.1 Performance” for the items
not listed on Table 17.1).
Jan 27, 2006
1: Definition of program/erase times
The program/erase times are defined to be per-block erase times. When the program/erase times
are n times (n=1,000 or 10,000 times), to erase n times per block is possible. For example, if
performing one-byte write to the distinct addresses on the Block A of 2K-byte block 2,048 times and
then erasing that block, the number of the program/erase cycles is one time. if rewriting more than
1,000 times, run the program until the vacant areas are all used to reduce the substantial rewrite
times and then erase. Avoid rewriting only particular blocks and rewrite to average the program and
erase times to each block. Also keep the erase times as inrformation and set up the limit times.
(1)
User ROM area is rewritten by executing
software commands from the CPU.
User ROM area
Single chip mode
None
EW0 mode: Can be rewritten in any area
EW1 mode: Can be rewritten in the flash
B l o c k 0 a n d 1 ( p r o g r a m R O M )
B l o c k A a n d B ( d a t a f l a s h )
page 165 of 205
I t e m
CPU rewrite mode
other than the flash memory
memory
Protect for Block 0 by FMR16 bit and Block 1 by FMR16 bit
Protect for Block 0 and 1 by FMR02 bit in FMR0 register
2 modes (CPU rewrite and standard serial I/O)
See “Figure 17.1. Flash Memory Block Diagram”
In units of byte
Block erase
Program and erase controlled by software command
1,000 times
10,000 times
S t a n d a r d s e r i a l I / O m o d e i s s u p p o r t e d .
5 commands
User ROM area is rewritten by using a
dedicated serial programmer.
User ROM area
Boot mode
Serial programmer
Standard serial I/O mode 1
Standard serial I/O mode 2
: Clock synchronous serial I/O
: UART
S p e c i f i c a t i o n
Standard serial I/O mode
17. Memory Map