DF2214BQ16V Renesas Electronics America, DF2214BQ16V Datasheet - Page 192

IC H8S/2214 MCU FLASH 112-TFBGA

DF2214BQ16V

Manufacturer Part Number
DF2214BQ16V
Description
IC H8S/2214 MCU FLASH 112-TFBGA
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheets

Specifications of DF2214BQ16V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
16MHz
Connectivity
SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
D/A 1x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
112-TFBGA
For Use With
HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2218 - DEV EVAL KIT H8S/2218
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2214BQ16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller
Bit 5—Burst ROM Enable (BRSTRM): Selects whether area 0 is used as a burst ROM
interface.
Bit 5
BRSTRM
0
1
Bit 4—Burst Cycle Select 1 (BRSTS1): Selects the number of burst cycles for the burst ROM
interface.
Bit 4
BRSTS1
0
1
Bit 3—Burst Cycle Select 0 (BRSTS0): Selects the number of words that can be accessed in a
burst ROM interface burst access.
Bit 3
BRSTS0
0
1
Bits 2 to 0—Reserved: Only 0 should be written to these bits.
Rev.4.00 Sep. 18, 2008 Page 130 of 872
REJ09B0189-0400
Description
Area 0 is basic bus interface
Area 0 is burst ROM interface
Description
Burst cycle comprises 1 state
Burst cycle comprises 2 states
Description
Max. 4 words in burst access
Max. 8 words in burst access
(Initial value)
(Initial value)
(Initial value)

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