R5F21324ANSP#U1 Renesas Electronics America, R5F21324ANSP#U1 Datasheet - Page 563

• Manufacturer Part Number: R5F21324ANSP#U1
• Description: MCU 1KB FLASH 16K ROM 20-LSSOP
• Manufacturer: Renesas Electronics America
• Series: R8C/3x/32Ar

Specifications of R5F21324ANSP#U1

• Core Processor: R8C
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SIO, SSU, UART/USART
• Peripherals: POR, PWM, Voltage Detect, WDT
• Number Of I /o: 15
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1.5K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-LSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Under development
R8C/32A Group
REJ09B0458-0020 Rev.0.20
Page 533 of 583
Table 32.6
Notes:
−
−
−
t
−
−
−
−
−
−
−
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
command at least three times until the erase error does not occur.
CC
= 2.7 to 5.5 V at T
Program/erase endurance
Byte program time
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Suspend interval necessary for auto-
erasure to complete
Time from suspend until erase restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Preliminary specification
Specifications in this manual are tentative and subject to change.
Flash Memory (Program ROM) Electrical Characteristics
opr
Parameter
(7)
= 0 to 60 ° C, unless otherwise specified.
Nov 05, 2008
(2)
Ambient temperature = 55 ° C
Conditions
1,000
Min.
2.7
1.8
20
20
−
−
−
0
−
0
(3)
32. Electrical Characteristics
Standard
Typ.
0.3
80
−
−
−
−
−
−
−
−
−
5 + CPU clock
30 + CPU clock
× 3 cycles
× 1 cycle
Max.
TBD
TBD
5.5
5.5
60
−
−
−
−
times
year
Unit
ms
ms
µ s
µ s
µ s
° C
V
V
s