MC9S12DT256MPVE Freescale Semiconductor, MC9S12DT256MPVE Datasheet - Page 1037

• Manufacturer Part Number: MC9S12DT256MPVE
• Description: IC MCU 256K FLASH 25MHZ 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12DT256MPVE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, I²C, SCI, SPI
• Peripherals: PWM, WDT
• Number Of I /o: 91
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.25 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 112-LQFP
• Processor Series: S12D
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 12 KB
• Interface Type: CAN/I2C/SCI/SPI
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 91
• Number Of Timers: 1
• Operating Supply Voltage: 5 V to 2.5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: M68KIT912DP256
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (8-ch x 10-bit)
• No. Of I/o's: 91
• Eeprom Memory Size: 4KB
• Ram Memory Size: 12KB
• Cpu Speed: 25MHz
• No. Of Timers: 1
• No. Of Pwm Channels: 8
• Digital Ic Case Style: LQFP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 25
2 Kbyte EEPROM Module (S12XEETX2KV1)
25.1
This document describes the EETX2K module which includes a 2Kbyte EEPROM (nonvolatile) memory.
The EEPROM memory may be read as either bytes, aligned words, or misaligned words. Read access time
is one bus cycle for bytes and aligned words, and two bus cycles for misaligned words.
The EEPROM memory is ideal for data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The EEPROM module supports both block erase
(all memory bytes) and sector erase (4 memory bytes). An erased bit reads 1 and a programmed bit reads
0. The high voltage required to program and erase the EEPROM memory is generated internally. It is not
possible to read from the EEPROM block while it is being erased or programmed.
25.1.1
Command Write Sequence — A three-step MCU instruction sequence to execute built-in algorithms
(including program and erase) on the EEPROM memory.
25.1.2
25.1.3
Program, erase and erase verify operations (please refer to
Operations”
Freescale Semiconductor
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2 Kbytes of EEPROM memory divided into 512 sectors of 4 bytes
Automated program and erase algorithm
Interrupts on EEPROM command completion and command buffer empty
Fast sector erase and word program operation
2-stage command pipeline
Sector erase abort feature for critical interrupt response
Flexible protection scheme to prevent accidental program or erase
Single power supply for all EEPROM operations including program and erase
Introduction
Glossary
Features
Modes of Operation
for details).
An EEPROM word (2 bytes) must be in the erased state before being
programmed. Cumulative programming of bits within a word is not allowed.
MC9S12XDP512 Data Sheet, Rev. 2.21
CAUTION
Section 25.4.1, “EEPROM Command
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