MC9S12DT256MPVE Freescale Semiconductor, MC9S12DT256MPVE Datasheet - Page 1257

IC MCU 256K FLASH 25MHZ 112-LQFP

MC9S12DT256MPVE

Manufacturer Part Number
MC9S12DT256MPVE
Description
IC MCU 256K FLASH 25MHZ 112-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet

Specifications of MC9S12DT256MPVE

Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
CAN, I²C, SCI, SPI
Peripherals
PWM, WDT
Number Of I /o
91
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
2.35 V ~ 5.25 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
112-LQFP
Processor Series
S12D
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
12 KB
Interface Type
CAN/I2C/SCI/SPI
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
91
Number Of Timers
1
Operating Supply Voltage
5 V to 2.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
M68KIT912DP256
Minimum Operating Temperature
- 40 C
On-chip Adc
2 (8-ch x 10-bit)
No. Of I/o's
91
Eeprom Memory Size
4KB
Ram Memory Size
12KB
Cpu Speed
25MHz
No. Of Timers
1
No. Of Pwm Channels
8
Digital Ic Case Style
LQFP
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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A.3
A.3.1
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as f
The minimum program and erase times shown in
maximum f
A.3.1.1
The programming time for single word programming is dependant on the bus frequency as a well as on the
frequency f
A.3.1.2
This applies only to the Flash where up to 64 words in a row can be programmed consecutively using burst
programming by keeping the command pipeline filled. The time to program a consecutive word can be
calculated as:
The time to program a whole row is:
Burst programming is more than 2 times faster than single word programming.
Freescale Semiconductor
NVM, Flash, and EEPROM
NVMOP
bus
NVM Timing
Single Word Programming
Burst Programming
. The maximum times are calculated for minimum f
Unless otherwise noted the abbreviation NVM (nonvolatile memory) is used
for both Flash and EEPROM.
and can be calculated according to the following formula.
NVMOSC
NVMOP
.
is required for performing program or erase operations. The NVM modules
MC9S12XDP512 Data Sheet, Rev. 2.21
t
t
t
swpgm
bwpgm
brpgm
=
=
=
t
9
swpgm
4
NOTE
Table A-17
------------------------ -
f
NVMOP
------------------------ -
f
NVMOP
1
1
+
63 t
+
+
25
bwpgm
9
are calculated for maximum f
----------- -
f
----------- -
f
bus
bus
1
1
NVMOP
and a f
Appendix A Electrical Characteristics
bus
of 2 MHz.
NVMOP
and
1259

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