ADUC7032BSTZ-8V-RL Analog Devices Inc, ADUC7032BSTZ-8V-RL Datasheet - Page 12

IC BATTERY SENSOR PREC 48-LQFP

ADUC7032BSTZ-8V-RL

Manufacturer Part Number
ADUC7032BSTZ-8V-RL
Description
IC BATTERY SENSOR PREC 48-LQFP
Manufacturer
Analog Devices Inc
Series
MicroConverter® ADuC7xxxr
Datasheet

Specifications of ADUC7032BSTZ-8V-RL

Core Processor
ARM7
Core Size
16/32-Bit
Speed
20.48MHz
Connectivity
LIN, SPI, UART/USART
Peripherals
POR, PSM, Temp Sensor, WDT
Number Of I /o
9
Program Memory Size
96KB (96K x 8)
Program Memory Type
FLASH
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 18 V
Data Converters
A/D 2x16b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
48-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
ADUC7032BSTZ-8V-RLCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ADUC7032BSTZ-8V-RL
Manufacturer:
Analog Devices Inc
Quantity:
10 000
Parameter
LIN I/O General Contd.
LIN V1.3 Specification
Preliminary Technical Data
I
V
V
V
V
V
V
V
V
V
V
GND-Shift
R
V
Transmit Propagation Delay
Symmetry of Transmit
Propagation Delay
Receive Propagation Delay
Symmetry of Receive
Propagation Delay
t
t
LIN_NO_GND
SYM
SYM
dV
dV
LIN_DOM
LIN_REC
LIN_CNT
HYS
LIN_DOM_DRV_LOSUP
LIN_DOM_DRV_HISUP
LIN_DOM_DRV_LOSUP
LIN_DOM_DRV_HISUP
LIN_RECESSIVE
BAT
slave
Serial Diode
dt
dt
1
-Shift
1
1
1
1
1
1
31
31
31
31
1
1
1
1
1
1
1
Test Conditions/Comments
Control Unit disconnected from ground
LIN Receiver Dominant State, VDD > 7.0V
LIN Receiver Recessive State, VDD > 7.0V
LIN Receiver Centre Voltage, VDD > 7.0V
LIN Receiver Hysteresis Voltage
LIN Dominant Output Voltage. V
LIN Dominant Output Voltage. V
LIN Dominant Output Voltage. V
LIN Dominant Output Voltage. V
LIN Recessive Output Voltage
Slave Termination Resistance
Voltage Drop at the serial diode D
VDD
Bus Load Conditions ( C
VDD
VDD
VDD
Bus Load Conditions ( C
Slew Rate
Dominant and recessive Edges V
Slew Rate
Dominant and recessive Edges V
Symmetry of rising and falling edge V
Symmetry of rising and falling edge V
GND = V
MIN
MIN
MIN
MIN
1nF||1kΩ ; 6.8nF|| 660 Ω ; 10nF || 500Ω
1nF||1kΩ ; 6.8nF|| 660 Ω ; 10nF || 500Ω
= 7V
= 7V
= 7V
= 7V
DD
; 0V V
LIN
<18V ; V
Rev. PrD | Page 12 of 128
BUS
BUS
|| R
|| R
BAT
BUS
BUS
DD
DD
DD
DD
= 12V
BAT
BAT
):
) :
Ser_Int
7V, R
18V,R
7V, R
18V,R
= 18V
= 7V
BAT
BAT
L
L
L
L
= 18V
= 7V
500Ω
1000Ω
500Ω
1000Ω
Min
-1
0.6V
0.475V
0.6
0.8
0.8 V
0
0
20
0.4
-2
-2
1
0.5
-5
-4
DD
DD
DD
0.5 V
Typ
30
0.7
2
DD
0.4V
0.525V
0.175V
0.1V
0.1V
Max
1
1.2
2
47
1
4
2
6
2
3
3
5
4
ADuC7032
DD
DD
DD
DD
DD
Unit
mA
V
V
V
V
V
V
V
V
V
V
V
KΩ
V
µs
µs
µs
µs
V/µs
V/µs
µs
µs

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