EP9312-CB Cirrus Logic Inc, EP9312-CB Datasheet - Page 505

• Manufacturer Part Number: EP9312-CB
• Description: System-on-Chip Processor
• Manufacturer: Cirrus Logic Inc
• Series: EP9r

Specifications of EP9312-CB

• Peak Reflow Compatible (260 C): No
• A/d Converter: 12 Bits
• Leaded Process Compatible: No
• No. Of I/o Pins: 65
• Package / Case: 352-BGA
• Core Processor: ARM9
• Core Size: 16/32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, EIDE, Ethernet, I²C, IrDA, Keypad/Touchscreen, SPI, UART/USART, USB
• Peripherals: AC'97, DMA, I&sup2:S, LCD, LED, MaverickKey, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 3.6 V
• Data Converters: A/D 8x12b
• Oscillator Type: External
• Operating Temperature: 0°C ~ 70°C
• Processor Series: EP93xx
• Core: ARM920T
• Data Bus Width: 32 bit
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / Rohs Status: No
• Other names: 598-1257

DS785UM1
13.8.1 Chip Select SDCSN[3:0] Decoding
13.8 External Synchronous Memory System
to the SyncFLASH register and the associated value on the data pins specifies which
SyncFLASH register is written. Actually, the value on the data pins specifies a command to
the SyncFLASH device such as Write Configuration Register, Lock Block, Block Erase; and
the associated value on the address pins specifies either a value that is written to a register
or a address location inside the SyncFLASH device.
Synchronous FLASH devices:
The synchronous memory system is decoded from the ARM Core’s physical memory map
into four independent address domains, each having an address range of 256 Mbytes (64
Mwords). All of the memory devices that are attached to a given domain must be of the same
type, but the other domains may use different memory device types and associated timing
characteristics.
Since all memory devices, synchronous or static, share a common external memory bus, the
total number of devices is limited by the maximum allowable bus capacitance.
Each of the four address domains within synchronous memory space have an associated
chip select signal that is output on one of the SDCSn[3:0] pins as shown in
signals are decoded from address bits A31:A28.
The latched value of ASDO determines how SDCSn3 is mapped into synchronous memory
space. If the latched value of ASDO=1 then SDCSn3 is mapped to 0x0000_0000 otherwise it
is mapped to 0xF000_0000.
• Use the same combination of the CS, RAS, CAS, and WE signals which would normally
• Cannot be written in bursts, but only one word at a time. Hence the requirement to write
• Require 100 μs of initialization time after a low-to-high transition occurs on its write
• Can be set up by either programming the Synchronous FLASH Configuration register
place an SDRAM device into Auto-Refresh mode
WBM = ‘1’ to the appropriate SDRAMDevCfg register. When WBM = ‘1’, no Auto
Refresh cycle will occur in the associated synchronous memory domain because the
synchronous memory controller will assume that a Synchronous FLASH device is
attached.
protect input pin
before releasing the processor from reset or by using the contents of it’s
NonVolatileMODE register (which must have been previously programmed).
Boot Option
(ASDO)
1
A31
0
Table 13-9. Chip Select Decoding
Copyright 2007 Cirrus Logic
A30
0
A29
0
SDRAM, SyncROM, and SyncFLASH Controller
A28
0
Chip select
nSDCS3
EP93xx User’s Guide
Table
13-9. These
13-9
13