mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 112

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 77:
Figure 78:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
REFRESH Command-to-Power-Down Entry
ACTIVATE Command-to-Power-Down Entry
Notes:
Notes:
Command
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. The earliest active power-down entry may occur is at T2, which is 1 ×
Command
Address
REFRESH command. Precharge power-down entry occurs prior to
command. Active power-down entry occurs prior to
CK#
CKE
CK#
CKE
CK
CK
Valid
Valid
T0
T0
REFRESH
112
Valid
T1
ACT
T1
1 x t CK
1 t CK
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Power-down 1
Power-down 1
entry
512Mb: x4, x8, x16 DDR2 SDRAM
NOP
entry
T2
NOP
T2
t
RCD (MIN) being satisfied.
t CKE (MIN)
t CKE (MIN)
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T3
T3
t
RFC (MIN) being satisfied.
t
CK after the ACTIVATE
Don’t Care
Don’t Care
t
CK after the
Operations