mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 30

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mt47h64m8b6-5e-it

Manufacturer Part Number
mt47h64m8b6-5e-it
Description
512mb X4, X8, X16 Ddr2 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
Table 11:
DQS output access
time from CK/CK#
DQS read
preamble
DQS read
postamble
CK/CK# to DQS
Low-Z
DQS rising edge to
CK rising edge
DQS input-high
pulse width
DQS input-low
pulse width
DQS falling to CK
rising: setup time
DQS falling from
CK rising: hold
time
Write preamble
setup time
DQS write
preamble
DQS write
postamble
WRITE command
to first DQS
transition
Parameter
AC Characteristics
AC Operating Specifications and Conditions for -187E, -25E, -3E, -3, -37E, and -5E Speeds (Sheet 3 of 7)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported;
Notes: 1–5 (page 35) apply to the entire table; V
Symbol
t
t
t
t
DQSCK
WPRES
t
t
t
t
t
DQSH
WPRE
DQSS
DQSL
t
WPST
RPRE
t
RPST
t
DSH
DSS
LZ
1
–300
Min
-187E
Max
+300
–350
Min
-25E
Max
+350
DD
Q = +1.8V ±0.1V, V
–350
Min
-25
+350
Max
MAX = WL +
MAX = +0.25 ×
MAX =
MIN = –0.25 ×
MIN = WL -
MIN = 0.35 ×
MIN = 0.35 ×
MIN = 0.35 ×
MAX = 1.1 ×
MAX = 0.6 ×
MIN =
MAX = 0.6 ×
MIN = 0.9 ×
MIN = 0.4 ×
MIN = 0.2 ×
MIN = 0.2 ×
MIN = 0.4 ×
MAX = n/a
MAX = n/a
MAX = n/a
MAX = n/a
MAX = n/a
MAX = n/a
–400
Min
MIN = 0
DD
t
t
-3E
AC (MIN)
AC (MAX)
= +1.8V ±0.1V
Max
+400
t
DQSS
t
t
t
t
t
t
DQSS
t
t
t
CK
CK
t
t
CK
CK
t
CK
CK
CK
CK
t
CK
CK
CK
CK
t
CK
–400
Min
-3
+400
Max
–450
Min
-37E
Max
+450
–500
Min
-5E
+500
Max
Units Notes
t
t
t
t
t
t
t
t
t
t
ps
CK
CK
ps
CK
CK
CK
CK
CK
ps
CK
CK
CK
18, 19
19, 20
21, 22
23, 24
18, 25
17,
17,
18,
19,
19
18
18
18
18
18
18

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