mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 7
mt47h64m8b6-5e-it
Manufacturer Part Number
mt47h64m8b6-5e-it
Description
512mb X4, X8, X16 Ddr2 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT47H64M8B6-5E-IT.pdf
(122 pages)
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Automotive Temperature
General Notes
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
DDR2_x4x8x16_Core1.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
The automotive temperature (AT) option, if offered, has two simultaneous require-
ments: ambient temperature surrounding the device cannot be less than –40°C or
greater than +105°C, and the case temperature cannot be less than –40°C or greater than
+105°C. JEDEC specifications require the refresh rate to double when T
this also requires use of the high-temperature self refresh option. Additionally, ODT
resistance and the input/output impedance must be derated when T
+85°C.
• The functionality and the timing specifications discussed in this data sheet are for the
• Throughout the data sheet, the various figures and text refer to DQs as “DQ.” The DQ
• Complete functionality is described throughout the document, and any page or
• Any specific requirement takes precedence over a general statement.
DLL-enabled mode of operation.
term is to be interpreted as any and all DQ collectively, unless specifically stated
otherwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper
byte. For the lower byte (DQ0–DQ7), DM refers to LDM and DQS refers to LDQS. For
the upper byte (DQ8–DQ15), DM refers to UDM and DQS refers to UDQS.
diagram may have been simplified to convey a topic and may not be inclusive of all
requirements.
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Functional Description
©2004 Micron Technology, Inc. All rights reserved.
C
is < 0°C or >
C
exceeds +85°C;
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