mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 24

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Table 7:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
512Mb_DDR2_x4x8x16_D2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
Die
Revision
B
D
F
Last shrink
target
Package
Thermal Impedance
60-ball
84-ball
60-ball
84-ball
60-ball
84-ball
60-ball
84-ball
Notes:
Substrate
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
1. Thermal resistance data is based on a number of samples from multiple lots and should be
2. This is an estimate; simulated number and actual results could vary.
viewed as a typical number.
Airflow = 0m/s
θ JA (°C/W)
53.2
37.4
50.2
34.9
56.9
40.6
56.8
40.3
71.4
53.6
65.8
50
72
54
66
50
Airflow = 1m/s
θ JA (°C/W)
24
40.0
30.9
36.8
28.0
43.6
34.1
42.8
33.2
54.1
44.5
50.4
41.3
55
45
52
42
Electrical Specifications – Absolute Ratings
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Airflow = 2m/s θ JB (°C/W) θ JC (°C/W) Notes
θ JA (°C/W)
512Mb: x4, x8, x16 DDR2 SDRAM
27.7
25.5
31.3
30.4
40.5
37.7
37.2
32.1
38.5
37.7
47.5
44.3
48
41
45
39
27.5
24.2
24.5
21.3
30.6
27.0
24.8
23.5
33.7
33.5
30.7
30.5
34
34
32
32
©2004 Micron Technology, Inc. All rights reserved.
2.9
3.1
3.8
3.9
5.5
4.1
5.5
4.5
1
1
1
2