mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 86

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 49:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
Consecutive READ Bursts
Notes:
DQS, DQS#
DQS, DQS#
Command
Command
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
Address
Address
CK#
CK#
DQ
DQ
CK
CK
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
t CCD
RL = 3
t CCD
t
NOP
NOP
AC,
T1
T1
RL = 4
t
DQSCK, and
86
READ
READ
Bank,
Bank,
Col b
Col b
T2
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
T2n
DQSQ.
NOP
NOP
512Mb: x4, x8, x16 DDR2 SDRAM
T3
T3
DO
n
T3n
T3n
NOP
NOP
T4
T4
DO
n
Transitioning Data
T4n
T4n
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NOP
NOP
T5
T5
DO
b
T5n
T5n
Operations
T6
NOP
T6
NOP
Don’t Care
DO
b
T6n
T6n