mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 8

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Functional Block Diagrams
Figure 3:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
512Mb_DDR2_x4x8x16_D2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
BA0, BA1
A0–A13,
RAS#
CAS#
WE#
ODT
CKE
CK#
CS#
CK
16
Address
register
registers
Mode
Control
128 Meg x 4 Functional Block Diagram
logic
16
counter
Refresh
14
11
2
14 Row-
The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is inter-
nally configured as a multi-bank DRAM.
address
MUX
2
Column-
counter/
control
address
Bank
logic
latch
14
latch and
decoder
address
Bank 0
row-
Bank 1
Bank 2
Bank 3
9
2
16,384
DM mask logic
(16,384 x 512 x 16)
Sense amplifiers
I/O gating
Column
decoder
8,192
memory
Bank 1
Bank 0
Bank 2
(x16)
array
512
Bank 3
Column 0, Column 1
16
internal
CK, CK#
8
16
16
READ
latch
CK out
drivers
WRITE
FIFO
CK in
and
Column 0, Column 1
4
4
4
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Mask
Data
MUX
16
4
generator
DQS
1
1
1
1
4
4
4
4
registers
Input
512Mb: x4, x8, x16 DDR2 SDRAM
Data
4
DQS, DQS#
1
1
1
1
4
4
4
4
2
CK, CK#
1
4
DRVRS
2
Functional Block Diagrams
DLL
RCVRS
©2004 Micron Technology, Inc. All rights reserved.
sw1
sw1
sw1
sw1 sw2
R1
R1
R1
R1
R1
R1
ODT control
sw2
sw2
sw2
R2
R2
R2
R2
R2
R2
VssQ
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
V
DD
Q
DM
DQ0–DQ3
DQS, DQS#