mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 69
mt47h64m8b6-5e-it
Manufacturer Part Number
mt47h64m8b6-5e-it
Description
512mb X4, X8, X16 Ddr2 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT47H64M8B6-5E-IT.pdf
(122 pages)
- Current page: 69 of 122
- Download datasheet (5Mb)
REFRESH
SELF REFRESH
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
not violate any other timing parameters. After a bank has been precharged, it is in the
idle state and must be activated prior to any READ or WRITE commands being issued to
that bank. A PRECHARGE command is allowed if there is no open row in that bank (idle
state) or if the previously open row is already in the process of precharging. However, the
precharge period will be determined by the last PRECHARGE command issued to the
bank.
REFRESH is used during normal operation of the DDR2 SDRAM and is analogous to
CAS#-before-RAS# (CBR) REFRESH. All banks must be in the idle mode prior to issuing a
REFRESH command. This command is nonpersistent, so it must be issued each time a
refresh is required. The addressing is generated by the internal refresh controller. This
makes the address bits a “Don’t Care” during a REFRESH command.
The SELF REFRESH command can be used to retain data in the DDR2 SDRAM, even if
the rest of the system is powered down. When in the self refresh mode, the DDR2
SDRAM retains data without external clocking. All power supply inputs (including V
must be maintained at valid levels upon entry/exit and during SELF REFRESH opera-
tion.
The SELF REFRESH command is initiated like a REFRESH command except CKE is LOW.
The DLL is automatically disabled upon entering self refresh and is automatically
enabled upon exiting self refresh.
69
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
©2004 Micron Technology, Inc. All rights reserved.
Commands
REF
)
Related parts for mt47h64m8b6-5e-it
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
VFBGA 63/I//MICRON NAND FLASH 1Gb Mass Storage
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
SYNCHRONOUS DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Q-FLASHTM MEMORY
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns
Manufacturer:
Micron Semiconductor Products
Datasheet: