mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 14

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mt47h64m8b6-5e-it

Manufacturer Part Number
mt47h64m8b6-5e-it
Description
512mb X4, X8, X16 Ddr2 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
Table 3:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
512Mb_DDR2_x4x8x16_D2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
C7, C9, G3, E9,
D2, D8, E7, F2,
A3, E3, J3, N1,
L1, R8, R3, R7
A1, E1, M9,
A9, C1, C3,
G1, G7, G9
A7, B2, B8,
F8, H2, H8
Number
x16 Ball
A2, E2
A8, E8
R1, J9
P9
J1
J2
J7
FBGA 60-Ball – x4, x8 and 84-Ball – x16 Descriptions (continued)
A7, B2, B8, D2,
A9, C1, C3, C7,
B1, B9, D1, D9
A1, E9, L1, H9
A3, E3, J1, K9
x4, x8 Ball
G1, L3, L7
Number
A2, A8
D8
C9
E1
E2
E7
Symbol
V
V
V
V
V
V
RFU
V
SS
NU
DD
NC
NF
DD
SS
REF
DD
SS
DL
Q
Q
L
Supply Power supply: 1.8V ±0.1V.
Supply DQ power supply: 1.8V ±0.1V. Isolated on the device for
Supply DLL power supply: 1.8V ±0.1V.
Supply SSTL_18 reference voltage (V
Supply Ground.
Supply DLL ground: Isolated on the device from V
Supply DQ ground: Isolated on the device for improved noise
Type
Description
improved noise immunity.
immunity.
No connect: These balls should be left unconnected.
No function: x8: these balls are used as DQ4–DQ7; x4: they are
no function.
Not used: If EMR(E10) = 0: x16, A8 = UDQS# and E8 = LDQS#;
x8, A2 = RDQS# and A8 = DQS#; x4, A2 = NU and A8 = NU. If
EMR(E10) = 1: x16, A8 = NU and E8 = NU; x8, A2 = NU and
A8 = NU; x4, A2 = NU and A8 = NU.
Reserved for future use: Bank address BA2. Row address bits
A13 (x16 only), A14, and A15.
14
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Ball Assignments and Descriptions
512Mb: x4, x8, x16 DDR2 SDRAM
DD
Q/2).
©2004 Micron Technology, Inc. All rights reserved.
SS
and V
SS
Q.

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