mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 54

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 28:
Figure 29:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
Nominal Slew Rate for
Tangent Line for
V
V
Hold slew rate
rising signal
V
V
IL
IL
V
V
IH
IH
V
V
(
(
IL
IL
(
(
DC
AC
IH
IH
(
(
AC
DC
V
DC
AC
(
(
) MAX
) MAX
REF
AC
DC
V
) MIN
) MIN
V
) MAX
) MAX
REF
CK#
) MIN
) MIN
DD
V
(
CK
V
DC
CK#
DD
(
Q
SS
t
V
CK
DC
)
IH
Q
SS
)
=
DC to V
Tangent line (V
DC to V
region
region
t
IH
REF
REF
Nominal
slew rate
REF
ΔTR
t IS
[
DC
t IS
Tangent
] - V
line
IL
[
DC
t IH
] MAX)
54
t IH
ΔTR
ΔTR
Hold slew rate
falling signal
Nominal
Micron Technology, Inc., reserves the right to change products or specifications without notice.
line
Nominal
slew rate
DC to V
=
t IS
512Mb: x4, x8, x16 DDR2 SDRAM
region
Tangent line (V
t IS
Tangent
DC to V
line
region
REF
t IH
t IH
REF
ΔTF
Input Slew Rate Derating
IH
ΔTF
ΔTF
[
DC
Nominal
] MIN - V
line
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REF
[
DC
])