mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet - Page 22

• Manufacturer Part Number: mt47h64m16hw-3
• Description: 1gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

FBGA Package Capacitance
Table 5:
PDF: 09005aef821ae8bf/Source: 09005aef821aed36
1Gb_DDR2_x4x8x16_D2.fm - 1Gb DDR2: Rev. N; Core DDR2: Rev. C 4/08 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address balls, CS#,
RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank address balls,
CS#, RAS#, CAS#, WE#, CKE, ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM, NF
Input Capacitance
Notes:
1. This parameter is sampled. V
2. The input capacitance per ball group will not differ by more than this maximum amount for
3. ΔC are not pass/fail parameters but rather targets.
4. Reduce MAX limit by 0.25pF for -25, -25E, -187E speed devices.
5. Reduce MAX limit by 0.5pF for -3, -3E, -25, -25E, -187E speed devices.
6. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum
T
balls, reflecting the fact that they are matched in loading.
any given device.
amount for any given device.
C
= 25°C, V
OUT
(
DC
) = V
DD
Q/2, V
DD
22
OUT
= +1.8V ±0.1V, V
Symbol
(peak-to-peak) = 0.1V. DM input is grouped with I/O
C
C
C
C
C
DCK
C
DIO
CK
DI
IO
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
DD
Min
1Gb: x4, x8, x16 DDR2 SDRAM
1.0
1.0
2.5
Q = +1.8V ±0.1V, V
–
–
–
FBGA Package Capacitance
Max
0.25
0.25
2.0
2.0
4.0
0.5
©2004 Micron Technology, Inc. All rights reserved.
REF
Units
= V
pF
pF
pF
pF
pF
pF
SS
, f = 100 MHz,
Notes
2, 3
1, 4
2, 3
1, 5
3, 6
1