mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet - Page 93

• Manufacturer Part Number: mt47h64m16hw-3
• Description: 1gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Table 43:
Figure 54:
PDF: 09005aef8117c187/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 1Gb DDR2: Rev. N; Core DDR2: Rev. C 4/08 EN
Command
READ with
precharge
(Bank n)
From
auto
Bank address
DQS, DQS#
DQS, DQS#
Case 1: t AC (MIN) and t DQSCK (MIN)
Command
Case 2: t AC (MAX) and t DQSCK (MAX)
READ Using Concurrent Auto Precharge
Address
Bank Read – Without Auto Precharge
DQ 8
DQ 8
CK#
CKE
A10
DM
CK
Notes:
WRITE or WRITE with auto precharge
NOP 1
T0
READ or READ with auto precharge
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4 and AL = 0 in the case shown.
3. The PRECHARGE command can only be applied at T6 if
4. READ-to-PRECHARGE = AL + BL/2 -2CK + MAX (
5. Disable auto precharge.
6. “Don’t Care” if A10 is HIGH at T5.
7. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level, but
8. DO n = data-out from column n; subsequent elements are applied in the programmed
PRECHARGE or ACTIVATE
times.
to when the device begins to drive or no longer drives, respectively.
order.
Bank x
ACT
RA
T1
RA
To Command
(Bank m)
t CK
NOP 1
T2
t CH
t RCD
t CL
NOP 1
T3
t RAS 3
Bank x
93
READ 2
Col n
5
T4
(with Concurrent Auto Precharge)
t RTP 4
NOP 1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RC
T5
t LZ (MAX)
t LZ (MIN)
CL = 3
One bank
All banks
Bank x 6
7
t
RTP/
Minimum Delay
PRE 3
T6
1Gb: x4, x8, x16 DDR2 SDRAM
7
t RPRE
t LZ (MIN)
t LZ (MIN)
t
(BL/2) + 2
CK or 2CK).
t RPRE
Transitioning Data
BL/2
t
RAS (MIN) is met.
1
NOP 1
T7
t DQSCK (MAX)
t DQSCK (MIN)
DO
n
t AC (MIN)
t AC (MAX)
DO
n
T7n
t RP
©2003 Micron Technology, Inc. All rights reserved.
NOP 1
T8
t HZ (MIN)
t HZ (MAX)
T8n
t RPST
Don’t Care
t RPST
Bank x
Operations
ACT
RA
T9
7
RA
7
Units
t
t
t
CK
CK
CK