mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet - Page 94

• Manufacturer Part Number: mt47h64m16hw-3
• Description: 1gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 55:
PDF: 09005aef8117c187/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 1Gb DDR2: Rev. N; Core DDR2: Rev. C 4/08 EN
Bank address
Command 1
DQS, DQS#
DQS, DQS#
Case 2: t AC (MAX) and t DQSCK (MAX)
Case 1: t AC (MIN) and t DQSCK (MIN)
Address
DQ 6
DQ 6
CK#
CKE
A10
DM
CK
Bank Read – with Auto Precharge
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4, RL = 4 (AL = 1, CL = 3) in the case shown.
3. The DDR2 SDRAM internally delays auto precharge until both
4. Enable auto precharge.
5. I/O balls, when entering or exiting HIGH-Z, are not referenced to a specific voltage level,
6. DO n = data-out from column n; subsequent elements are applied in the programmed
times.
have been satisfied.
but to when the device begins to drive or no longer drives, respectively.
order.
t CK
NOP 1
T2
t CH
t RCD
t CL
READ 2,3
Bank x
Col n
4
T3
AL = 1
t RAS
prefetch
4-bit
NOP 1
94
T4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP 1
t RTP
t RC
T5
t LZ (MAX)
t LZ (MIN)
CL = 3
precharge
Internal
1Gb: x4, x8, x16 DDR2 SDRAM
5
NOP 1
T6
5
t LZ (MIN)
t RPRE
t LZ (MAX)
t RPRE
NOP 1
Transitioning Data
T7
t
t RP
t DQSCK (MIN)
RAS (MIN) and
DO
t DQSCK (MAX)
©2003 Micron Technology, Inc. All rights reserved.
t AC (MIN)
n
t AC (MAX)
DO
n
T7n
NOP 1
T8
t HZ (MIN)
Operations
t HZ (MAX)
T8n
t
RTP (MIN)
t RPST
t RPST
Don’t Care
Bank x
ACT
RA
5
RA
5