mc68hc912dg128 Freescale Semiconductor, Inc, mc68hc912dg128 Datasheet - Page 117

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mc68hc912dg128

Manufacturer Part Number
mc68hc912dg128
Description
M68hc12 Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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MC68HC912DG128 — Rev 3.0
MOTOROLA
NOTE:
The programming software is responsible for all timing during a program
sequence. This includes the total number of program pulses (n
length of the program pulse (t
and the delay between turning off the high voltage and verifying the
operation (t
The erase software is responsible for all timing during an erase
sequence. This includes the total number of erase pulses (e
length of the erase pulse (t
and the delay between turning off the high voltage and verifying the
operation (t
Software also controls the supply of the proper program/erase voltage to
the V
a program/erase sequence.
A program/erase cycle should not be in progress when starting another
program/erase, or while attempting to read from the array.
Although clearing ENPE disables the program/erase voltage (V
the V
whenever programming/erasing is not in progress. Not doing so could
damage the part. Ensuring that V
can be accomplished by controlling the V
programming software via an output pin. Alternatively, all programming
and erasing can be done prior to installing the device on an application
circuit board which can always connect V
also be accomplished by plugging the board into a special programming
fixture which provides program/erase voltage to the V
Freescale Semiconductor, Inc.
For More Information On This Product,
FP
FP
pin, and should be at the proper level before ENPE is set during
pin to the array, care must be taken to ensure that V
VPROG
VERASE
Go to: www.freescale.com
Flash Memory
).
).
EPULSE
PPULSE
FP
), the erase margin pulse or pulses,
is always greater or equal to V
), the program margin pulses (p
FP
FP
power supply with the
to V
DD
. Programming can
FP
pin.
Technical Data
FP
Flash Memory
m
), the
is at V
PP
FP
Operation
) from
), the
DD
DD
117
m
)

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