KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 10

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
2.2
b (lower-case letter)
W (capital letter)
Calculated ECC
B (capital letter)
Written ECC
BufferRAM
BootRAM
DataRAM
Data unit
Sector
Definitions
ECC
Possible data unit to be read from memory to BufferRAM or to be programmed to memory.
Part of a Page of which 512B is the main data area and 16B is the spare data area.
ECC that has been stored as data in the NAND Flash array or in the BufferRAM
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area
- 1584B of which 1536B is in main area and 48B in spare area
- 2112B of which 2048B is in main area and 64B in spare area
A 1KB portion of the BufferRAM reserved for Boot Code buffering
ECC that has been calculated during a load or program access
It is also the minimum Load/Program/Copy-Back Program unit
On-chip internal buffer consisting of BootRAM and DataRAM
A 4KB portion of the BufferRAM reserved for Data buffering
during a 1~4 sector operation is available.
10
Error Correction Code
Word, 16bits
Byte, 8bits
Bit
FLASH MEMORY