KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 76

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
Program Operation Flow Diagram
During the execution of the Internal Program Routine, the host is not required to provide any further controls or timings. Furthermore,
all commands, except a Reset command, will be ignored. A reset during a program operation will cause data corruption at the corre-
sponding location.
If a program error is detected at the completion of the Internal Program Routine, map out the block, including the page in error, and
copy the target data to another block. An error is signaled if DQ10 = "1" of Controller Status Register(F240h) .
Data input from the Host to the DataRAM can be done at any time during the Internal Program Routine after "Start" but before the
"Write Program Command" is written.
Write ’BSA, BSC’ of DataRAM
Add: F100h DQ=DFS*’, FBA
Add: F200h DQ=BSA, BSC
Write Data into DataRAM
Add: F107h DQ=FPA, FSA
Select DataRAM for DDP
Write ’DFS*, FBA’ of Flash
Write ’FPA, FSA’ of Flash
Add: F101h DQ=DBS*
ADD: DP DQ=Data-in
Note 1) This must happen before data input
Completed?
Data Input
2) Data input could be done anywhere between "Start" and "Write Program Command".
Start
YES
* DBS, DFS is for DDP
1)
2)
NO
Write 0 to interrupt register
Write ’Program’ Command
Add: F240h DQ[10]=Error
Add: F241h DQ[15]=INT
Add: F241h DQ=0000h
low to high transition
DQ=0080h or 001Ah
Wait for INT register
Program completed
Read Controller
Status Register
*
Add: F220h
DQ[10]=0?
76
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
YES
FLASH MEMORY
Program Error
NO