KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 38

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

NOTE:
- BI: Bad block Information
>Host can use complete spare area except BI and ECC code area. For example,
>In case of ’with ECC’ mode, MuxOneNAND automatically generates ECC code for both main and spare data of memory during program operation,
>When loading/programming spare area, spare area BufferRAM address(BSA) and BufferRAM sector count(BSC) is chosen via Start buffer register
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
DataS 1_3
Host can write data to Spare area buffer except for the area controlled by ECC logic at program operation.
but does not update ECC code to spare bufferRAM during load operation.
as it is.
Buf.
Address
804Ah
804Bh
804Ch
804Dh
804Eh
804Fh
8048h
8049h
Word
Address
1009Ah
1009Ch
1009Eh
10090h
10092h
10094h
10096h
10098h
Byte
F
ECC Code for Spare area data (1
ECC Code for Main area data (2
E
Reserved for the future use
Reserved for the future use
D
C
B
Reserved for the current and future use
Equivalent to 1word of NAND Flash
Equivalent to 1word of NAND Flash
38
A
Managed by Internal ECC logic
9
nd
st
)
)
Free Usage
8
BI
7
ECC Code for Spare area data (2
ECC Code for Main area data (3
ECC Code for Main area data (1
6
Managed by Internal ECC logic
FLASH MEMORY
5
4
3
2
1
st
rd
nd
)
)
)
0