KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 113

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
6.11
NOTE:
1. Internal reset operation means that the device initializes internal registers and makes output signals go to default status and bufferRAM data are kept
unchanged after Warm/Hot reset operations.
2. Reset command : Command based reset or Register based reset
3. BP(Boot Partition): BootRAM area [0000h~01FFh, 8000h~800Fh]
4. 00F0h for BP, and 00F3h for F220h
OneNAND
Operation
ADQi
AVD
RDY
WE
INT
OE
CE
bit
Hot Reset Timing
High-Z
BP(Note 3)
or F220h
Operation or Idle
00F0h
or 00F3h
113
OneNAND reset
t
Ready
2
FLASH MEMORY
Idle