KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 99

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

Voltage reference to GND
NOTES:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
2. Vcc-Core (or Vcc) should reach the operating voltage level prior to or at the same time as Vcc-IO (or Vccq).
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
4.0
4.1
NOTES:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V) .
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
4.2
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Output Current
Recommended Operating Temperature
Supply Voltage
Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
DC CHARACTERISTICS
Absolute Maximum Ratings
Operating Conditions
Parameter
SS
V
V
CC-
CC-
Symbol
Vcc
All Pins
Extended
Industrial
core / Vcc
IO / Vccq
V
SS
T
T
A
A
(Extended Temp.)
(Industrial Temp.)
99
Min
1.7
0
Symbol
T
Vcc
T
V
I
bias
OS
stg
IN
KFM1G16Q2M
Typ.
1.8
0
-0.5 to + 2.45
-0.5 to + 2.45
-30 to +125
-40 to +125
-65 to +150
-30 to +85
-40 to +85
FLASH MEMORY
Rating
5
Max
1.95
0
Unit
mA
°C
°C
°C
Unit
V
V
V